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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB676
DESCRIPTION With TO-220C package High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications
PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 30 150 -55~150 ae ae UNIT V V V A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA, IB=0 IC=-3A ,IB=-6mA IC=-3A ,IB=-6mA VCB=-100V, IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN -80 TYP.
2SB676
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
MAX
UNIT V
-1.5 -2.0 -20 -2.5 |I
V V A mA
Switching times ton ts tf Turn-on time Storage time Fall time VCE=-30V, IB1=-IB2=-6mA RL=10| 0.15 0.80 0.40 |I |I |I s s s
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB676
Fig.2 Outline dimensions
3


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